| PART |
Description |
Maker |
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYM72V1600GS-50 HYM72V1610GS-50 HYM72V1600GS-50- H |
16M x 72-Bit Dynamic RAM Module 16米x 72位动态随机存储器模块
16M x 72-Bit Dynamic RAM Module 16M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
|
SIEMENS AG
Siemens Semiconductor Group
|
| HYM72V1620GS-50 HYM72V1620GS-50- HYM72V1620GS-60 H |
16M x 72-Bit Dynamic RAM Module 16M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
From old datasheet system
16M x 72-Bit Dynamic RAM Module (ECC - Module )
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MX23L1651MC-50G MX23L1651 MX23L1651HC-15 |
16M-BIT [16M x 1] CMOS SERIAL MASK-ROM
|
MCNIX[Macronix International]
|
| LH28F160S5H-L |
16M-bit (2MB x 8/1MB x 16) Smart 5 Flash Memories(16M(2Mx 8/1Mx 16) Smart5 技术闪速存储器)
|
Sharp Corporation
|
| HYB3165405BTL-60 HYB3165405BTL-50 HYB3165405BTL-40 |
16M x 4 Bit 4k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MBM29PL160BD-90PF MBM29PL160BD-90PFTN MBM29PL160BD |
16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 90 ns, PDSO44
16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
Modular Connector
122 x 32 pixel format, LED Backlight available
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MC-4516DA727PFA-A75 MC-4516DA727 MC-4516DA727EFA-A |
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
NEC, Corp.
NEC Corp.
|
| MC-4516CD641XS-A10 MC-4516CD641XS-A80 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 SOCKET TYPE, SODIMM-144
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory, Inc.
|
| K9F2808U0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-YIB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM23C16205DSG |
16M-Bit (1Mx16 /512Kx32) CMOS MASK ROM(16M(1Mx16 /512Kx32) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| UPD23C128040BLGY-XXX-MJH UPD23C128080BLGY-XXX-MJH |
128M-bit (16M-wordx8-bit/8M-wordx16-bit) Mask ROM
|
NEC
|
